STF30N10F7 STMicroelectronics

STF30N10F7 N-channel 100 V, 0.02 typ., 24 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description TO-220FP This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- Figure 1: Internal schematic diagram state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STF30N10F7 30N10F7 TO-220FP Tube September 2016 DocID029717 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STF30N10F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP type A package information ........................................... 10 5 Revision history ............................................................................ 12 2/13 DocID029717 Rev 1