Product Information

STF36N60M6

STF36N60M6 electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.6378 ea
Line Total: USD 8.64

5 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STF36N60M6
STMicroelectronics

1 : USD 8.385
3 : USD 5.785
8 : USD 5.46

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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The STF36N60M6 with MOSFET PTD High Voltage is a power transistor manufactured by STMicroelectronics. This part is an insulated gate bipolar transistor (IGBT) featuring an N-channel with high voltage (HV) breakdown capability of up to 600V. It also has low on-state resistance (RDS(on)) and its switching losses are reduced due to its trench-gate construction. The STF36N60M6 is optimized for Switchmode™ converter and motor driver applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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