Product Information

STFI6N65K3

STFI6N65K3 electronic component of STMicroelectronics

Datasheet
N-Channel 650 V 5.4A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
Manufacturer: STMicroelectronics
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Price (USD)

1: USD 1.7124 ea
Line Total: USD 1.71

29 - Global Stock
Ships to you between
Wed. 22 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
29 - WHS 1


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STFI6N65K3
STMicroelectronics

1 : USD 1.657
10 : USD 1.058
50 : USD 0.5148
100 : USD 0.5029

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STF6N65K3, STFI6N65K3, STU6N65K3 N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK Datasheet production data Features Order codes V R max. I Ptot DSS DS(on) D STF6N65K3 TAB 30 W STFI6N65K3 650 V < 1.3 5.4 A STU6N65K3 110 W 3 3 2 2 1 2 1 1 3 100% avalanche tested TO-220FP IPAKFP IPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Figure 1. Internal schematic diagram Zener-protected D(2,TAB) Applications Switching applications G(1) Description These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on- S(3) resistance, superior dynamic performance and AM01476v1 high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STF6N65K3 TO-220FP STFI6N65K3 6N65K3 IPAKFP Tube STU6N65K3 IPAK November 2012 Doc ID 18424 Rev 2 1/16 This is information on a product in full production. www.st.com 16Contents STF6N65K3, STFI6N65K3, STU6N65K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 Doc ID 18424 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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