Product Information

STFI7LN80K5

STFI7LN80K5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOSFET in a I2PAKFP package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

12: USD 0.6233 ea
Line Total: USD 7.48

97 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 12  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
97 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 12
Multiples : 1

Stock Image

STFI7LN80K5
STMicroelectronics

12 : USD 0.5819

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STFI7LN80K5 N-channel 800 V, 0.95 typ., 5 A MDmesh K5 Power MOSFET in a IPAKFP package Datasheet - production data Features Order code V R max. I DS DS(on) D STFI7LN80K5 800 V 1.15 5 A Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra-low gate charge 1 2 3 100% avalanche tested 2 Zener-protected I PAKFP (TO-281) Applications Switching applications Figure 1: Internal schematic diagram D(2) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate G(1) charge for applications requiring superior power density and high efficiency. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STFI7LN80K5 7LN80K5 IPAKFP (TO-281) Tube December 2015 DocID028783 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STFI7LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAKFP (TO-281) package information ........................................... 9 5 Revision history ............................................................................ 11 2/12 DocID028783 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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