STFI6N80K5 STMicroelectronics

STF6N80K5, STFI6N80K5 N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max I P DS DS(on) D TOT STF6N80K5 800 V 1.6 4.5 A 25 W STFI6N80K5 3 2 1 1 Industrys lowest R 2 DS(on) 3 TO-220FP 2 Industrys best figure of merit (FoM) I PAKFP Ultra low gate charge 100% avalanche tested Figure 1. Internal schematic diagram Zener-protected D(2) Applications Switching applications Description G(1) These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate S(3) charge for applications requiring superior power AM01476v1 density and high efficiency. Table 1. Device summary Order code Marking Package Packing STF6N80K5 TO-220FP 6N80K5 Tube 2 STFI6N80K5 I PAKFP September 2016 DocID024664 Rev 4 1/15 This is information on a product in full production. www.st.comContents STF6N80K5, STFI6N80K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 TO-220FP package information 10 2 4.2 I PAKFP (TO-281) package information . 12 5 Revision history . 14 2/15 DocID024664 Rev 4