Product Information

STGD5NB120SZ-1

STGD5NB120SZ-1 electronic component of STMicroelectronics

Datasheet
IGBT Transistors 5 A 1200V LOW DROP INTERN CLAMPED IGBT
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 75
Multiples : 75

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STGD5NB120SZ-1
STMicroelectronics

75 : USD 0.7927
300 : USD 0.761
1125 : USD 0.761
1875 : USD 0.761
3750 : USD 0.761
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

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STGD5NB120SZ-1
STMicroelectronics

1 : USD 4.0784
10 : USD 1.4506
100 : USD 1.0843
500 : USD 0.9151
1000 : USD 0.7649
5000 : USD 0.7103
10000 : USD 0.6824
25000 : USD 0.6665
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

STGD5NB120SZ-1
STMicroelectronics

1 : USD 1.6848
5 : USD 1.0425
24 : USD 0.9938
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Pulsed Collector Current
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
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Additional Infomation About Product

STGD5NB120SZ Datasheet 5 A, 1200 V, low drop internally clamped IGBT Features Low on-voltage drop (V ) CE(sat) TAB High current capability 3 2 High voltage clamping 1 DPAK Applications , Low switching frequency applications Description This device is low drop internally clamped IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. Product status link STGD5NB120SZ Product summary Order code STGD5NB120SZT4 Marking GD5NB120SZ Package DPAK Packing Tape and reel DS3341 - Rev 9 - June 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGD5NB120SZ Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 10 C I A C Continuous collector current at T = 100 C 5 C (1) I Pulsed collector current 10 A CP (2) I Turn-off latching current 10 A CL V Gate-emitter voltage 20 V GE V Emitter-collector voltage 20 V ECR P Total power dissipation at T = 25 C 75 W TOT C T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width is limited by maximum junction temperature 2. V = 80% V , V = 15 V, R = 10 , T = 150 C CLAMP CES GE G J Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 1.67 C/W thJC R Thermal resistance, junction-to-ambient 100 C/W thJA DS3341 - Rev 9 page 2/18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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