STGD7NC60HT4 STMicroelectronics

STGD7NC60HT4 Datasheet N-channel 600 V, 14 A, very fast IGBT Features V V max. I (at T = 100 C) Order codes TAB CES CE(sat) C C STGD7NC60HT4 600 V 2.5 V 14 A 3 2 1 Low on-voltage drop (V ) CE(sat) DPAK High-frequency operation up to 70 kHz C(2, TAB) Applications Switching applications G(1) Description This device is a very fast IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching E(3) performance and low on-state behavior. This device is well-suited for resonant or G1C2TE3 soft-switching applications. Product status link STGD7NC60HT4 Product summary Order code STGD7NC60HT4 Marking GD7NC60H Package DPAK Packing Tape and reel DS11749 - Rev 3 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGD7NC60HT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 25 A C I C Continuous collector current at T = 100 C 14 A C (1) I Pulsed collector current 50 A CM V Gate-emitter voltage 20 V GE P Total dissipation at T = 25 C 70 W TOT C T Storage temperature range STG -55 to 150 C T Operating junction temperature range J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.78 C/W thJ-case R Thermal resistance junction-ambient 100 C/W thJ-amb DS11749 - Rev 3 page 2/19