Product Information

STGB30V60F

STGB30V60F electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1000

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STGB30V60F
STMicroelectronics

1000 : USD 1.1371
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000

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STGB30V60F
STMicroelectronics

3000 : USD 1.3272
N/A

Obsolete
0 - WHS 3

MOQ : 1000
Multiples : 1000

Stock Image

STGB30V60F
STMicroelectronics

1000 : USD 1.384
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

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STGB30V60F
STMicroelectronics

1 : USD 4.6603
10 : USD 1.6881
25 : USD 1.6052
100 : USD 1.3774
500 : USD 1.1702
1000 : USD 1.0232
N/A

Obsolete
0 - WHS 5

MOQ : 7
Multiples : 1

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STGB30V60F
STMicroelectronics

7 : USD 0.9726
10 : USD 0.9184
25 : USD 0.903
100 : USD 0.885
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
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Additional Infomation About Product

STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J TAB Tail-less switching off TAB V = 1.85 V (typ.) I = 30 A CE(sat) C Tight parameters distribution Safe paralleling 3 3 1 2 1 Low thermal resistance 2 D PAK TO-220 Applications Photovoltaic inverters Uninterruptible power supply Figure 1. Internal schematic diagram Welding C (2, TAB) Power factor correction Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency E (3) converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order codes Marking Package Packaging 2 STGB30V60F GB30V60F D PAK Tape and reel STGP30V60F GP30V60F TO-220 Tube April 2014 DocID025049 Rev 4 1/19 This is information on a product in full production. www.st.com 19Contents STGB30V60F, STGP30V60F Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 10 4 Package mechanical data 11 4.1 DPAK, STGB30V60F 11 4.2 TO-220, STGP30V60F . 14 5 Packaging mechanical data 16 6 Revision history . 18 2/19 DocID025049 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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