Product Information

STGB30H60DFB

STGB30H60DFB electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.2395 ea
Line Total: USD 958

0 - Global Stock
MOQ: 4000  Multiples: 4000
Pack Size: 4000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 1000
Multiples : 1000

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STGB30H60DFB
STMicroelectronics

1000 : USD 1.9556

0 - WHS 2


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 4000
Multiples : 4000

Stock Image

STGB30H60DFB
STMicroelectronics

4000 : USD 0.2395

0 - WHS 3


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

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STGB30H60DFB
STMicroelectronics

1 : USD 8.1814
10 : USD 2.9515
25 : USD 2.7858

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STGB30H60DFB, STGP30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J TAB TAB High speed switching series Minimized tail current 3 Low saturation voltage: V = 1.55 V (typ.) I = 30 A CE(sat) C 1 3 2 D PAK TO-220 2 Tight parameter distribution 1 Safe paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGB30H60DFB STGP30H60DFB DS10468 - Rev 3 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGB30H60DFB, STGP30H60DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 60 C I C Continuous collector current at T = 100 C 30 A C (1) I Pulsed collector current 120 CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 Continuous forward current at T = 25 C 60 C I F Continuous forward current at T = 100 C 30 A C (1) I Pulsed forward current 120 FP P Total power dissipation at T = 25 C 260 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.58 thJC R Thermal resistance junction-case diode 2.08 C/W thJC R Thermal resistance junction-ambient 62.5 thJA DS10468 - Rev 3 page 2/21

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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