Product Information

STGF10M65DF2

STGF10M65DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

57: USD 0.5901 ea
Line Total: USD 33.64

339 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 57  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
339 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 57
Multiples : 1

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STGF10M65DF2
STMicroelectronics

57 : USD 0.572
100 : USD 0.572
300 : USD 0.572
1250 : USD 0.572
4000 : USD 0.572

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Numofpackaging
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STGF10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) I = 10 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C Applications TO-220FP Motor control UPS Figure 1: Internal schematic diagram PFC General purpose inverter C (2) Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series G (1) IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling Sc12850 no tab operation. E (3) Table 1: Device summary Order code Marking Package Packing STGF10M65DF2 G10M65DF2 TO-220FP Tube April 2017 DocID027428 Rev 7 1/17 www.st.com This is information on a product in full production. Contents STGF10M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 TO-220FP package information ...................................................... 14 5 Revision history ............................................................................ 16 2/17 DocID027428 Rev 7

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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