Product Information

STGF15H60DF

STGF15H60DF electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate H series 600V 15A HiSpd
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2247 ea
Line Total: USD 1.22

48 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STGF15H60DF
STMicroelectronics

1 : USD 1.2247
10 : USD 1.1985
30 : USD 1.1804
100 : USD 1.1624

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STGB15H60DF, STGF15H60DF, STGP15H60DF Datasheet Trench gate field-stop IGBT, H series 600 V, 14 A high speed Features TAB High speed switching 3 1 Tight parameters distribution 2 D PAK 3 2 1 Safe paralleling TO-220FP TAB Low thermal resistance Short-circuit rated 3 2 Ultrafast soft recovery antiparallel diode 1 TO-220 C(2, TAB) Applications Motor control UPS, PFC G(1) Description These devices are IGBTs developed using an advanced proprietary trench gate field- E(3) NG1E3C2T stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGB15H60DF STGF15H60DF STGP15H60DF DS9881 - Rev 3 - April 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGB15H60DF, STGF15H60DF, STGP15H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220 TO-220FP V Collector-emitter voltage (V = 0 V) 600 V CES GE (1) Continuous collector current at T = 25 C 30 30 C I A C (1) Continuous collector current at T = 100 C 15 15 C (2) I Pulsed collector current 60 60 A CP V Gate-emitter voltage 20 V GE (1) Continuous forward current T = 25 C 30 C 30 I A F (1) Continuous forward current at T = 100 C 15 C 15 (2) I Pulsed forward current 60 60 A FP Insulation withstand voltage (RMS) from all three leads to external heat sink V 2500 V ISO (t = 1 s T = 25 C) c P Total power dissipation at T = 25 C 115 30 W TOT C T Storage temperature range -55 to 150 STG C T Operating junction temperature range -55 to 175 J 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit 2 D PAK, TO-220 TO-220FP R Thermal resistance junction-case IGBT 1.3 5 C/W thJC R Thermal resistance junction-case diode 2.78 6.25 C/W thJC R Thermal resistance junction-ambient 62.5 62.5 C/W thJA DS9881 - Rev 3 page 2/24

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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