STGB15H60DF, STGF15H60DF, STGP15H60DF Datasheet Trench gate field-stop IGBT, H series 600 V, 14 A high speed Features TAB High speed switching 3 1 Tight parameters distribution 2 D PAK 3 2 1 Safe paralleling TO-220FP TAB Low thermal resistance Short-circuit rated 3 2 Ultrafast soft recovery antiparallel diode 1 TO-220 C(2, TAB) Applications Motor control UPS, PFC G(1) Description These devices are IGBTs developed using an advanced proprietary trench gate field- E(3) NG1E3C2T stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGB15H60DF STGF15H60DF STGP15H60DF DS9881 - Rev 3 - April 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGB15H60DF, STGF15H60DF, STGP15H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220 TO-220FP V Collector-emitter voltage (V = 0 V) 600 V CES GE (1) Continuous collector current at T = 25 C 30 30 C I A C (1) Continuous collector current at T = 100 C 15 15 C (2) I Pulsed collector current 60 60 A CP V Gate-emitter voltage 20 V GE (1) Continuous forward current T = 25 C 30 C 30 I A F (1) Continuous forward current at T = 100 C 15 C 15 (2) I Pulsed forward current 60 60 A FP Insulation withstand voltage (RMS) from all three leads to external heat sink V 2500 V ISO (t = 1 s T = 25 C) c P Total power dissipation at T = 25 C 115 30 W TOT C T Storage temperature range -55 to 150 STG C T Operating junction temperature range -55 to 175 J 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit 2 D PAK, TO-220 TO-220FP R Thermal resistance junction-case IGBT 1.3 5 C/W thJC R Thermal resistance junction-case diode 2.78 6.25 C/W thJC R Thermal resistance junction-ambient 62.5 62.5 C/W thJA DS9881 - Rev 3 page 2/24