X-On Electronics has gained recognition as a prominent supplier of STGP8M120DF3 igbt transistors across the USA, India, Europe, Australia, and various other global locations. STGP8M120DF3 igbt transistorsare a product manufactured by STMicroelectronics. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

STGP8M120DF3

STGP8M120DF3 electronic component of STMicroelectronics
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Part No. STGP8M120DF3
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop 1200 V 8 A low loss M series IGBT in a TO-220 package
Datasheet: STGP8M120DF3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 2.5745 ea
Line Total: USD 2574.5

Availability - 0
MOQ: 1000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1000
Multiples : 1
1000 : USD 3.6375
2000 : USD 3.6026
2500 : USD 3.5691
3000 : USD 3.5342
4000 : USD 3.5007
5000 : USD 3.4672
10000 : USD 3.4323
20000 : USD 3.3988
50000 : USD 3.3639

0 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 7.9518
10 : USD 5.2037
25 : USD 4.914
100 : USD 4.2566
500 : USD 3.6326
1000 : USD 3.2871

     
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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STGP8M120DF3 Datasheet Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package Features 10 s of minimum short-circuit withstand time TAB V = 1.85 V (typ.) I = 8 A CE(sat) C Tight parameter distribution Positive V temperature coefficient 3 CE(sat) 2 1 Low thermal resistance TO-220 Soft and very fast recovery antiparallel diode Maximum junction temperature: T = 175 C J C(2, TAB) Applications Industrial drives G(1) UPS Solar Welding E(3) NG1E3C2T General-purpose inverters Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature Product status link CE(sat) coefficient and tight parameter distribution result in safer paralleling operation. STGP8M120DF3 Product summary Order code STGP8M120DF3 Marking G8M120DF3 Package TO-220 Packing Tube DS11847 - Rev 2 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGP8M120DF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 16 A C I C Continuous collector current at T = 100 C 8 A C (1) I Pulsed collector current 32 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 16 A C I F Continuous forward current at T = 100 C 8 A C (1) I Pulsed forward current 32 A FP P Total dissipation at T = 25 C 167 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.9 C/W R thJC Thermal resistance junction-case diode 1.47 C/W R Thermal resistance junction-ambient 50 C/W thJA DS11847 - Rev 2 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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