STGP8M120DF3 STMicroelectronics

STGP8M120DF3 electronic component of STMicroelectronics
STGP8M120DF3 STMicroelectronics
STGP8M120DF3 IGBT Transistors
STGP8M120DF3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STGP8M120DF3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGP8M120DF3 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. STGP8M120DF3
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop 1200 V 8 A low loss M series IGBT in a TO-220 package
Datasheet: STGP8M120DF3 Datasheet (PDF)
Price (USD)
1000: USD 2.4113 ea
Line Total: USD 2411.3 
Availability : 0
  
QtyUnit Price
1000$ 2.4113
2000$ 2.3925

Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1000
Multiples : 1
QtyUnit Price
1000$ 2.4113
2000$ 2.3925


Availability 0
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.7072
10$ 5.0436
25$ 4.7628
100$ 4.1256
500$ 3.5208
1000$ 3.186

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STGP8M120DF3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGP8M120DF3 and other electronic components in the IGBT Transistors category and beyond.

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STGP8M120DF3 Datasheet Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package Features 10 s of minimum short-circuit withstand time TAB V = 1.85 V (typ.) I = 8 A CE(sat) C Tight parameter distribution Positive V temperature coefficient 3 CE(sat) 2 1 Low thermal resistance TO-220 Soft and very fast recovery antiparallel diode Maximum junction temperature: T = 175 C J C(2, TAB) Applications Industrial drives G(1) UPS Solar Welding E(3) NG1E3C2T General-purpose inverters Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature Product status link CE(sat) coefficient and tight parameter distribution result in safer paralleling operation. STGP8M120DF3 Product summary Order code STGP8M120DF3 Marking G8M120DF3 Package TO-220 Packing Tube DS11847 - Rev 2 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGP8M120DF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 16 A C I C Continuous collector current at T = 100 C 8 A C (1) I Pulsed collector current 32 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 16 A C I F Continuous forward current at T = 100 C 8 A C (1) I Pulsed forward current 32 A FP P Total dissipation at T = 25 C 167 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.9 C/W R thJC Thermal resistance junction-case diode 1.47 C/W R Thermal resistance junction-ambient 50 C/W thJA DS11847 - Rev 2 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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