STGW25S120DF3 STMicroelectronics

STGW25S120DF3, STGWA25S120DF3 Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Datasheet - production data Features 10 s of short-circuit withstand time V = 1.6 V (typ.) I = 25 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode 2 7 Applications 2 ORQJ OHDGV 7 Industrial drives UPS Figure 1. Internal schematic diagram Solar % 7 & RU Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop * structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive V temperature CE(sat) coefficient and tight parameter distribution result in safer paralleling operation. ( Table 1. Device summary Order code Marking Package Packing STGW25S120DF3 G25S120DF3 TO-247 Tube STGWA25S120DF3 G25S120DF3 TO-247 long leads Tube December 2014 DocID026374 Rev 2 1/18 This is information on a product in full production. www.st.comContents STGW25S120DF3, STGWA25S120DF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 12 4 Package information 13 4.1 TO-247, STGW25S120DF3 . 13 4.2 TO-247 long leads, STGWA25S120DF3 . 15 5 Revision history . 17 2/18 DocID026374 Rev 2