Product Information

STGW39NC60VD

STGW39NC60VD electronic component of STMicroelectronics

Datasheet
Transistor: IGBT; 600V; 40A; 250W; TO247-3

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.9258 ea
Line Total: USD 2.93

8372 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8119 - Warehouse 1


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STGW39NC60VD
STMicroelectronics

1 : USD 2.9258
10 : USD 2.4939
30 : USD 2.2236
100 : USD 1.9474
500 : USD 1.823
1000 : USD 1.7697

93 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

STGW39NC60VD
STMicroelectronics

1 : USD 4.953
3 : USD 4.485
5 : USD 3.588
13 : USD 3.393
120 : USD 3.263

232 - Warehouse 3


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 30
Multiples : 30

Stock Image

STGW39NC60VD
STMicroelectronics

30 : USD 2.9223

     
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Pulsed Collector Current
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
Gate Charge
Category
Brand Category
LoadingGif

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The STGW39NC60VD is a N-channel MOSFET transistor made by STMicroelectronics. It features a maximum drain-source voltage of 600V and a maximum drain current of 39A. It is a power MOSFET transistor and is capable of switching high frequencies in pulsed applications. It is also designed to reduce losses due to its low gate charge and low RDS(on).

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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