X-On Electronics has gained recognition as a prominent supplier of STGW40H120DF2 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGW40H120DF2 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGW40H120DF2 STMicroelectronics

STGW40H120DF2 electronic component of STMicroelectronics
STGW40H120DF2 STMicroelectronics
STGW40H120DF2 IGBT Transistors
STGW40H120DF2  Semiconductors

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See Product Specifications
Part No. STGW40H120DF2
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Datasheet: STGW40H120DF2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 5.1881 ea
Line Total: USD 155.64 
Availability - 0
MOQ: 30  Multiples: 30
Pack Size: 30
Availability Price Quantity
0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 600
Multiples : 600
600 : USD 5.5788
1200 : USD 5.5775

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 1
Multiples : 1
1 : USD 9.7008
5 : USD 9.0481
10 : USD 8.7468
50 : USD 8.1206
100 : USD 7.8309
250 : USD 7.5411

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 30
Multiples : 30
30 : USD 5.1881
90 : USD 5.1075
150 : USD 4.8852
600 : USD 4.7947
900 : USD 4.743

0
Ship by Fri. 16 May to Wed. 21 May
MOQ : 1
Multiples : 1
1 : USD 26.7045
10 : USD 22.98
30 : USD 21.151
100 : USD 19.5563

0
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 9.7454
10 : USD 8.4631
25 : USD 8.062
100 : USD 7.0091
500 : USD 6.0966
1000 : USD 5.9362

0
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 15.582
2 : USD 10.472
3 : USD 10.458
5 : USD 9.898
3000 : USD 9.604

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 300
Multiples : 300
300 : USD 8.4585
510 : USD 8.4546
600 : USD 7.786
1020 : USD 7.6262
1200 : USD 7.6238

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 30
Multiples : 30
30 : USD 12.4162

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
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We are delighted to provide the STGW40H120DF2 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGW40H120DF2 and other electronic components in the IGBT Transistors category and beyond.

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STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) IC = 40 A 5 s minimum short circuit withstand time at TJ=150 C Safe paralleling Very fast recovery antiparallel diode Low thermal resistance Applications Uninterruptible power supply Figure 1: Internal schematic diagram Welding machines Photovoltaic inverters Power factor correction High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive V temperature coefficient CE(sat) and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGW40H120DF2 G40H120DF2 TO-247 Tube STGWA40H120DF2 G40H120DF2 TO-247 long leads Tube June 2016 DocID023753 Rev 5 1/17 www.st.com This is information on a product in full production. Contents STGW40H120DF2, STGWA40H120DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 4.1 TO-247 package information ........................................................... 12 4.2 TO-247 long leads package information ......................................... 14 5 Revision history ............................................................................ 16 2/17 DocID023753 Rev 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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