STGW50HF60SD STMicroelectronics

STGW50HF60SD 60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features Very low on-state voltage drop Low switching off High current capability Very soft ultra fast recovery antiparallel diode 3 Application 2 1 PV inverter TO-247 UPS Description STGW50HF60SD is a very low drop IGBT based on new advanced planar technology, showing Figure 1. Internal schematic diagram extremely low on-state voltage and limited turn-off losses. The overall performance makes this IGBT ideal in low frequency switches of mixed frequency topologies for PF 1. Table 1. Device summary Order code Marking Package Packaging STGW50HF60SD GW50HF60SD TO-247 Tube December 2010 Doc ID 16818 Rev 2 1/13 www.st.com 13Electrical ratings STGW50HF60SD 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 600 V CES GE (1) I Continuous collector current at T = 25 C 110 A C C (1) I Continuous collector current at T = 100 C 60 A C C (2) I Turn-off latching current 60 A CL (3) I Pulsed collector current 130 A CP V Gate-emitter voltage 20 V GE P Total dissipation at T = 25 C 284 W TOT C I Diode RMS forward current at T = 25 C 30 A F C Surge non repetitive forward current t = 10 ms p I 120 A FSM sinusoidal T Operating junction temperature - 55 to 150 C j 1. Calculated according to the iterative formula: T T jm()ax C I()T = ---------------------------------------------------------------------------------------------------------- C C R V ()T , I()T thj c CE()sat()max jm()ax C C 2. Vclamp = 80% of V , T =150 C, R =10 , V =15 V CES j G GE 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.44 C/W thj-case R Thermal resistance junction-case diode 1.25 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb 2/13 Doc ID 16818 Rev 2