STGWA30N120KD STMicroelectronics

STGWA30N120KD electronic component of STMicroelectronics Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STGWA30N120KD IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWA30N120KD IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. STGWA30N120KD
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors 30A 1200V short circuit rugged IGBT
Datasheet: STGWA30N120KD Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.593
10$ 4.3185
25$ 4.0803
100$ 3.5418
600$ 3.0137
1200$ 2.734
N/A

Obsolete
   
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We are delighted to provide the STGWA30N120KD from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWA30N120KD and other electronic components in the IGBT Transistors category and beyond.

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STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low ON-state behavior. Table 1. Device summary Order codes Markings Package Packaging STGW30N120KD GW30N120KD TO-247 Tube STGWA30N120KD GWA30N120KD TO-247 long leads Tube February 2012 Doc ID 14394 Rev 5 1/15 www.st.com 15Contents STGW30N120KD, STGWA30N120KD Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Revision history . 14 2/15 Doc ID 14394 Rev 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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