Product Information

STGWA40H120DF2

STGWA40H120DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors IGBT & Power Bipolar
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

39: USD 3.275 ea
Line Total: USD 127.72

50 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 39  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
50 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 39
Multiples : 1

Stock Image

STGWA40H120DF2
STMicroelectronics

39 : USD 3.275

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Height
Length
Operating Temperature Range
Width
Brand
Continuous Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) IC = 40 A 5 s minimum short circuit withstand time at TJ=150 C Safe paralleling Very fast recovery antiparallel diode Low thermal resistance Applications Uninterruptible power supply Figure 1: Internal schematic diagram Welding machines Photovoltaic inverters Power factor correction High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive V temperature coefficient CE(sat) and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGW40H120DF2 G40H120DF2 TO-247 Tube STGWA40H120DF2 G40H120DF2 TO-247 long leads Tube June 2016 DocID023753 Rev 5 1/17 www.st.com This is information on a product in full production. Contents STGW40H120DF2, STGWA40H120DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 4.1 TO-247 package information ........................................................... 12 4.2 TO-247 long leads package information ......................................... 14 5 Revision history ............................................................................ 16 2/17 DocID023753 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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