Product Information

STGWA40H65DFB

STGWA40H65DFB electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.5627 ea
Line Total: USD 5.56

477 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
465 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

STGWA40H65DFB
STMicroelectronics

1 : USD 4.206
10 : USD 3.9924
30 : USD 3.8655
90 : USD 3.7365
510 : USD 3.6781
1200 : USD 3.65

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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The STGWA40H65DFB is a high-speed Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics' Trench Gate Field-Stop HB Series. It runs on a maximum voltage of 650V and offers a high current rating of up to 40A. This IGBT device has a negative gate drive voltage and features fast switching speeds and low losses. Its optimized geometry helps reduce tail current and guarantees minimal EMI. Additionally, its high ruggedness and stability make it well-suited for high working frequency applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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