STGWT20HP65FB STMicroelectronics

STGWT20HP65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data Features TAB Maximum junction temperature: T = 175 C J Minimized tail current VCE(sat) = 1.55 V (typ.) IC = 20 A Tight parameter distribution Co-packed diode for protection 3 Safe paralleling 2 Low thermal resistance 1 TO-3P Applications Figure 1: Internal schematic diagram Power factor corrector (PFC) Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGWT20HP65FB GWT20HP65FB TO-3P Tube December 2016 DocID029672 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STGWT20HP65FB Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 4.1 TO-3P package information ............................................................ 12 5 Revision history ............................................................................ 14 2/15 DocID029672 Rev 3