Product Information

STGWT28IH125DF

Name: STGWT28IH125DF
Brand: STMicroelectronics
SKU: STGWT28IH125DF_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGWT28IH125DF electronic component of STMicroelectronics

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Datasheet

STMicroelectronics IGBT Transistors 1250V 25A trench gte field-stop IGBT

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

600: USD 2.9929 ea
Line Total: USD 1795.74

0 - Global Stock

MOQ: 600 Multiples: 600
Pack Size: 600

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Tue. 28 May MOQ : 600 Multiples : 600 STGWT28IH125DF STMicroelectronics	600 : USD 2.9929

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Additional Infomation About Product

STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T = 175 C J Minimized tail current V = 2.0 V (typ.) I = 25 A CE(sat) C 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Low V soft recovery co-packaged diode F TO-247 TO-3P Low thermal resistance Lead free package Applications Figure 1. Internal schematic diagram Induction heating C (2, TAB) Microwave oven Resonant converters Description These IGBTs are developed using an advanced G (1) proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching E (3) application. Table 1. Device summary Order code Marking Package Packaging STGW28IH125DF G28IH125DF TO-247 Tube STGWT28IH125DF G28IH125DF TO-3P Tube February 2014 DocID025268 Rev 2 1/17 This is information on a product in full production. www.st.com 17Contents STGW28IH125DF, STGWT28IH125DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID025268 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1.25 kV 1.25 kV
Collector-Emitter Saturation Voltage 2.65 V 2.65 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 60 A 60 A
Gate-Emitter Leakage Current 250 nA 250 nA
Package / Case TO - 3P - 3 TO - 3P - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 375 W 375 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Series 900 - 1300V Igbts 900 - 1300V Igbts
Continuous Collector Current Ic Max 30 A 30 A
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 300 300
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541290000 8541290000