Product Information

STGWT30H60DFB

STGWT30H60DFB electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

30: USD 2.0765 ea
Line Total: USD 62.29

494 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 30  Multiples: 30
Pack Size: 30

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STGWT30H60DFB
STMicroelectronics

1 : USD 3.8586
10 : USD 3.6868
30 : USD 3.5822
100 : USD 3.4946

494 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 30
Multiples : 30

Stock Image

STGWT30H60DFB
STMicroelectronics

30 : USD 2.0765
510 : USD 2.0299
600 : USD 2.01
1020 : USD 1.9886
1200 : USD 1.9687
2010 : USD 1.9293

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
LoadingGif

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Additional Infomation About Product

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage: V = 1.55 V (typ.) I = 30 A CE(sat) C TAB Tight parameter distribution Safe paralleling 3 2 1 Positive V temperature coefficient TO-3P CE(sat) Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGW30H60DFB STGWA30H60DFB STGWT30H60DFB DS10467 - Rev 4 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office. STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 60 C I C Continuous collector current at T = 100 C 30 A C (1) I Pulsed collector current 120 CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 Continuous forward current at T = 25 C 60 C I F Continuous forward current at T = 100 C 30 A C (1) I Pulsed forward current 120 FP P Total power dissipation at T = 25 C 260 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.58 thJC R Thermal resistance junction-case diode 2.08 C/W thJC R Thermal resistance junction-ambient 50 thJA DS10467 - Rev 4 page 2/21

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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