X-On Electronics has gained recognition as a prominent supplier of STGYA120M65DF2 igbt transistors across the USA, India, Europe, Australia, and various other global locations. STGYA120M65DF2 igbt transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

STGYA120M65DF2

STGYA120M65DF2 electronic component of STMicroelectronics
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Part No.STGYA120M65DF2
Manufacturer: STMicroelectronics
Category:IGBT Transistors
Description: IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 120 A low loss
Datasheet: STGYA120M65DF2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Availability Price Quantity
0 - WHS 1

MOQ : 600
Multiples : 1
600 : USD 13.7371
1000 : USD 13.5993
2000 : USD 13.4628
2500 : USD 13.3289
3000 : USD 13.195
4000 : USD 13.0637
5000 : USD 12.9324
10000 : USD 12.8037
20000 : USD 12.675
50000 : USD 12.5489
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0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 12.4868
10 : USD 11.0226
25 : USD 10.5711
100 : USD 9.3189
500 : USD 8.2926
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0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 16.87
3 : USD 15.96
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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STGYA120M65DF2 Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) I = 120 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C Applications Motor control UPS PFC Figure 1: Internal schematic diagram General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGYA120M65DF2 G120M65DF2 Max247 long leads Tube September 2017 DocID029193 Rev 5 1/17 www.st.com This is information on a product in full production. Contents STGYA120M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 Max247 long leads package information ......................................... 14 5 Revision history ............................................................................ 16 2/17 DocID029193 Rev 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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