STH130N8F7-2 STMicroelectronics

STH130N8F7-2 N-channel 80 V, 4.2 m typ., 110 A STripFET F7 Power MOSFET in an HPAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH130N8F7-2 80 V 5.0 m 110 A 205 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STH130N8F7-2 130N8F7 HPAK-2 Tape and reel March 2017 DocID027283 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STH130N8F7-2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-2 package information ......................................................... 10 4.2 HPAK-2 packing information .......................................................... 12 5 Revision history ............................................................................ 14 2/15 DocID027283 Rev 2