STH15810-2 STMicroelectronics

STH15810-2 N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 2 Power MOSFET in a H PAK-2 package Datasheet preliminary data Features Order code V R I P DS DS(on)max D TOT STH15810-2 100 V 0.0039 110 A 250 W TAB 100% avalanche tested Ultra low on-resistance 2 3 Applications 1 2 Switching applications H PAK-2 Description This N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on- Figure 1. Internal schematic diagram state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. % 7 * 6 0 Y Table 1. Device summary Order code Marking Package Packaging 2 STH15810-2 15810 Tape and reel H PAK-2 August 2014 DocID025819 Rev 2 1/16 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com change without notice. Contents STH15810-2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 DocID025819 Rev 2