STL120N2VH5 STMicroelectronics

STL120N2VH5 N-channel 20 V, 0.002 , 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package Features Order code V R max I DSS DS(on) D STL120N2VH5 20 V < 0.003 28 A 1 Improved die-to-footprint ratio 2 3 4 Very low profile package Very low thermal resistance PowerFLAT 5x6 Conduction losses reduced Switching losses reduced 2.5 V gate drive Very low threshold device Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFETV technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in 3 3 3 its class. W 6IEOTTOM W 6IE OP 4 - 6 Table 1. Device summary Order code Marking Package Packaging STL120N2VH5 120N2VH5 PowerFLAT 5x6 Tape and reel March 2012 Doc ID 15603 Rev 2 1/18 www.st.com 18 Contents STL120N2VH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 15 6 Revision history . 17 2/18 Doc ID 15603 Rev 2