Product Information

STL12N60M6

STL12N60M6 electronic component of STMicroelectronics

Datasheet
N-Channel Power MOSFET 650V 6.4A 8-Pin PowerFLAT T/R

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9412 ea
Line Total: USD 1.94

2910 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

STL12N60M6
STMicroelectronics

1 : USD 1.3898
10 : USD 1.1819
100 : USD 1.1231
500 : USD 1.0808
1000 : USD 1.0674
3000 : USD 1.0461
6000 : USD 1.0461
9000 : USD 1.0461

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STL12N60M6 Datasheet N-channel 600 V, 390 m typ., 6.4 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package Features V T R max. I P Order code DS Jmax DS(on) D TOT STL12N60M6 650 V 490 m 6.4 A 48 W 1 2 Reduced switching losses 3 4 Lower R per area vs previous generation DS(on) PowerFLAT 5x6 HV Low gate input resistance 100% avalanche tested Zener-protected D(5, 6, 7, 8) 8 7 6 5 Applications G(4) Switching applications LLC converters Boost PFC converters 1 2 3 4 Top View S(1, 2, 3) Description AM15540v1 The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status STL12N60M6 Product summary Order code STL12N60M6 Marking 12N60M6 Package PowerFLAT 5x6 HV Packing Tape and Reel DS12869 - Rev 1 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL12N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 6.4 case I A D Drain current (continuous) at T = 100 C 4 case (1) I Drain current (pulsed) 24 A DM P Total power dissipation at T = 25 C 48 W TOT case (2) I Avalanche current, repetitive or not repetitive 1.8 A AR (3) E Single pulse avalanche energy 130 mJ AS (4) dv/dt Peak diode recovery voltage slope 15 V/ns (5) dv/dt MOSFET dv/dt ruggedness 100 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. Pulse width limited by T . jmax 3. starting T = 25 C, I = I , V = 50 V. j D AR DD 4. I 6.4 A, di/dt = 400 A/s V peak < V , V = 400 V. SD DS (BR)DSS DD 5. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.6 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. DS12869 - Rev 1 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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