Product Information

STL13N60M2

STL13N60M2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3842 ea
Line Total: USD 0.38

1 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

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1 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STL13N60M2
STMicroelectronics

1 : USD 0.3952

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STL13N60M2 N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Q g Power MOSFET in a PowerFLAT 5x6 HV package Datasheet production data Features Order code V T R max I DS Jmax DS(on) D STL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower R x area vs previous generation 1 DS(on) 2 3 Low gate input resistance 4 100% avalanche tested PowerFLAT 5x6 HV Zener-protected Applications Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) Description 8 7 6 5 This device is an N-channel Power MOSFET developed using a new generation of MDmesh technology: MDmesh II Plus low Q . This g revolutionary Power MOSFET associates a G(4) vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 12 3 4 Top View S(1, 2, 3) AM15540v2 Table 1. Device summary Order code Marking Package Packaging STL13N60M2 13N60M2 PowerFLAT 5x6 HV Tape and reel June 2014 DocID026363 Rev 2 1/16 This is information on a product in full production. www.st.comContents STL13N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID026363 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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