Product Information

STL130N8F7

STL130N8F7 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; STripFET™ F7; unipolar; 80V; 19A; 135W

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 1.069 ea
Line Total: USD 3207

5820 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2908 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STL130N8F7
STMicroelectronics

1 : USD 2.8132
10 : USD 2.5103
25 : USD 2.4401
100 : USD 2.1528
250 : USD 2.0917
500 : USD 1.95
1000 : USD 1.7745
3000 : USD 1.6692

5820 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL130N8F7
STMicroelectronics

3000 : USD 1.0703
6000 : USD 1.0573

2908 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1

Stock Image

STL130N8F7
STMicroelectronics

5 : USD 2.2211
10 : USD 2.1581
25 : USD 2.0119
100 : USD 1.8309
250 : USD 1.7222
500 : USD 1.6877

5820 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL130N8F7
STMicroelectronics

3000 : USD 1.069

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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STL130N8F7 Datasheet N-channel 80 V, 3.0 m typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I P Order code DS DS(on) D TOT STL130N8F7 80 V 3.6 m 120 A 135 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss PowerFLAT 5x6 High avalanche ruggedness D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced 1 2 3 4 trench gate structure that results in very low on-state resistance, while also reducing Top View S(1, 2, 3) internal capacitance and gate charge for faster and more efficient switching. AM15540v2 Product status link STL130N8F7 Product summary Order code STL130N8F7 Marking 130N8F7 Package PowerFLAT 5x6 Packing Tape and reel DS9349 - Rev 5 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL130N8F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 80 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 120 C (1) I A D Drain current (continuous) at T = 100 C 93 C Drain current (continuous) at T = 25 C 26 pcb (2) I A D Drain current (continuous) at T = 100 C 19 pcb (1)(3) I Drain current (pulsed) 480 A DM (2)(3) I Drain current (pulsed) 104 A DM (1) P Total power dissipation at T = 25 C 135 W TOT C (2) P Total power dissipation at T = 25 C pcb 4.8 W TOT (4) E Single pulse avalanche energy 515 mJ AS T Storage temperature range stg -55 to 175 C T Operating junction temperature range J 1. This value is rated according to R and is limited by package. thj-case 2. This value is rated according to R . thj-pcb 3. Pulse width is limited by safe operating area. 4. Starting T = 25 C, I = 18.5 A, V = 50 V. J D DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.1 C/W thj-case (1) R Thermal resistance junction-pcb 31.3 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu, t < 10 s. DS9349 - Rev 5 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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