Product Information

STL19N65M5

STL19N65M5 electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 650V 0.215 Ohm typ. 12.5A MDmeshV
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 1.17 ea
Line Total: USD 3510

2910 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
368 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STL19N65M5
STMicroelectronics

1 : USD 1.7929

2910 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL19N65M5
STMicroelectronics

3000 : USD 1.17

368 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1

Stock Image

STL19N65M5
STMicroelectronics

5 : USD 1.7732

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Additional Infomation About Product

STL19N65M5 N-channel 650 V, 0.215 typ., 12.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V R I DS DS(on)max. D 6 6 (1) STL19N65M5 710 V 0.240 12.5 A 6 * 1. The value is rated according to R and limited by thj-case package. Worldwide best R * area DS(on) Higher V rating and high dv/dt capability DSS Excellent switching performance 7 +9 3RZHU)/ Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The * resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior 6 power density and outstanding efficiency. 0 Y Table 1. Device summary Order code Marking Package Packaging STL19N65M5 19N65M5 PowerFLAT 8x8 HV Tape and reel July 2013 DocID024984 Rev 1 1/17 This is information on a product in full production. www.st.comContents STL19N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 16 2/17 DocID024984 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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