STL20DN10F7 STMicroelectronics

STL20DN10F7 Dual N-channel 100 V, 0.059 typ., 5 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 double island package Datasheet - production data Features 1 Order code V R max I DS DS(on) D 4 STL20DN10F7 100 V 0.067 5 A 1 8 N-channel enhancement mode 4 5 Lower R x area vs previous generation DS(on) 100% avalanche rated PowerFLAT 5x6 double island Applications Switching applications Figure 1. Internal schematic diagram Description th This device utilizes the 7 generation of design rules of STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. Table 1. Device summary Order code Marking Package Packaging STL20DN10F7 20DN10F7 PowerFLAT 5x6 double island Tape and reel April 2014 DocID023935 Rev 3 1/14 This is information on a product in full production. www.st.comContents STL20DN10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 DocID023935 Rev 3