STL21N65M5 STMicroelectronics

STL21N65M5 N-channel 650 V, 0.175 , 17 A ultra low gate charge MDmesh V Power MOSFET in PowerFLAT 8x8 HV package Datasheet production data Features V R DSS DS(on) Order code I 3 WOTTOM VIE D T max Jmax 3 3 (1) STL21N65M5 710 V < 0.190 17 A 1. The value is rated according to R thj-case 100% avalanche tested Low input capacitance and gate charge 4 X (6 ER&, W O 0 Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 3 - V Table 1. Device summary Order code Marking Package Packaging STL21N65M5 21N65M5 PowerFLAT 8x8 HV Tape and reel May 2012 Doc ID 17438 Rev 5 1/16 This is information on a product in full production. www.st.com 16Contents STL21N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 13 6 Revision history . 15 2/16 Doc ID 17438 Rev 5