Product Information

STL13DP10F6

STL13DP10F6 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STL13DP10F6
STMicroelectronics

1 : USD 0.9463
10 : USD 0.7244
100 : USD 0.6338
500 : USD 0.6211
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000

Stock Image

STL13DP10F6
STMicroelectronics

3000 : USD 0.6906
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

STL13DP10F6
STMicroelectronics

1 : USD 1.0936
30 : USD 1.0502
75 : USD 0.9881
150 : USD 0.9509
375 : USD 0.8569
750 : USD 0.8051
1500 : USD 0.8031
N/A

Obsolete
0 - WHS 4

MOQ : 3000
Multiples : 3000

Stock Image

STL13DP10F6
STMicroelectronics

3000 : USD 0.5713
6000 : USD 0.5415
12000 : USD 0.5322
18000 : USD 0.5182
24000 : USD 0.5136
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

Stock Image

STL13DP10F6
STMicroelectronics

1 : USD 4.6212
10 : USD 1.6669
100 : USD 1.3036
500 : USD 1.0685
1000 : USD 0.8441
3000 : USD 0.8174
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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STL13DP10F6 Dual P-channel 100 V, 0.136 typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Datasheet - production data Features V R max. I 1 Order code DS DS(on) D 4 STL13DP10F6 100 V 0.18 3.3 A 1 R * Q industry benchmark 8 DS(on) g 4 Extremely low on-resistance R DS(on) 5 High avalanche ruggedness PowerFLAT 5x6 Low gate drive power losses double island Applications Switching applications Figure 1. Internal schematic diagram Description This device is a dual P-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) Table 1. Device summary Order code Marking Packages Packaging STL13DP10F6 13DP10F6 PowerFLAT 5x6 double island Tape and reel May 2014 DocID023936 Rev 2 1/14 This is information on a product in full production. www.st.comContents STL13DP10F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 DocID023936 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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