STL13DP10F6 STMicroelectronics

STL13DP10F6 Dual P-channel 100 V, 0.136 typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Datasheet - production data Features V R max. I 1 Order code DS DS(on) D 4 STL13DP10F6 100 V 0.18 3.3 A 1 R * Q industry benchmark 8 DS(on) g 4 Extremely low on-resistance R DS(on) 5 High avalanche ruggedness PowerFLAT 5x6 Low gate drive power losses double island Applications Switching applications Figure 1. Internal schematic diagram Description This device is a dual P-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) Table 1. Device summary Order code Marking Packages Packaging STL13DP10F6 13DP10F6 PowerFLAT 5x6 double island Tape and reel May 2014 DocID023936 Rev 2 1/14 This is information on a product in full production. www.st.comContents STL13DP10F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 DocID023936 Rev 2