STL23NM50N STMicroelectronics

STL23NM50N N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Datasheet production data Features V R DSS DS(on) Type I 3 WOTTOM VIE D T max Jmax 3 3 (1) STL23NM50N 550 V < 0.210 14 A 1. The value is rated according to R thj-case 100% avalanche tested Low input capacitance and gate charge 4 X (6 ER&, W O 0 Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order code Marking Package Packaging STL23NM50N 23NM50N PowerFLAT 8x8 HV Tape and reel October 2012 Doc ID 022339 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents STL23NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 022339 Rev 2