STL9N65M2 STMicroelectronics

STL9N65M2 electronic component of STMicroelectronics
STL9N65M2 STMicroelectronics
STL9N65M2 MOSFETs
STL9N65M2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STL9N65M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STL9N65M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. STL9N65M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STL9N65M2 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.7016
9000$ 0.6902
24000$ 0.6686
45000$ 0.6483
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vds - Drain-Source Breakdown Voltage
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
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Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STL9N65M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STL9N65M2 and other electronic components in the MOSFETs category and beyond.

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10 11 STL9N65M2 Datasheet N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 HV package Features 6 7 5 V R max. I Order code DS DS(on ) D STL9N65M2 650 V 1.00 4.5 A 4 Extremely low gate charge Excellent output capacitance (C ) profile OSS 1 12 100% avalanche tested PowerFLAT 5x5 HV Zener-protected Applications G S S S Switching applications D(5, 6, 11, 12) 10 9 8 7 D 11 6 D Description G(10) D 12 5 D This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device 1 2 3 4 exhibits low on-resistance and optimized switching characteristics, rendering it S(2, 3, 4, 7, 8, 9) NC S S S suitable for the most demanding high efficiency converters. Pin 1 Top View identification GIPG260120150916ALS Product status link STL9N65M2 Product summary Order code STL9N65M2 Marking 9N65M2 Package PowerFLAT 5x5 HV Packing Tape and reel DS13058 - Rev 1 - July 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL9N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 4.5 A C I D Drain current (continuous) at T = 100 C 2.8 A C (1) I Drain current pulsed 12 A DM P Total power dissipation at T = 25 C 46 W TOT C I Avalanche current, repetitive or non-repetitive (pulse width limited by T max) 0.9 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 95 mJ AS J D AR DD (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width is limited by safe operating area. 2. I 4.5 A, di/dt 400 A/s, V V , V = 400 V. SD DS(peak) (BR)DSS DD 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.7 C/W thj-case (1) R Thermal resistance junction-pcb 58.5 C/W thj-pcb 1. When mounted on 1 inch FR-4 board, 2 oz Cu. DS13058 - Rev 1 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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