STL42P6LLF6 Datasheet P-channel -60 V, 23 m typ., -42 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Features V R max I Order code DS DS(on) D STL42P6LLF6 -60 V 26 m -42 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications D(5, 6, 7, 8) Switching applications Description G(4) This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all packages. DS(on) S(1, 2, 3) AM01475v4 Product status STL42P6LLF6 Product summary Order code STL42P6LLF6 Marking 42P6LLF6 Package PowerFLAT 5x6 Packing Tape and reel DS10014 - Rev 5 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL42P6LLF6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage -60 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C -42 A C D (1) I Drain current (continuous) at T = 100 C -30 A C D (1) (3) I Drain current (pulsed) -168 A D (2) Drain current (continuous) at T = 25 C I -9 A D pcb (2) Drain current (continuous) at T = 100 C I -6.6 A D pcb (3) (2) I Drain current (pulsed) -36 A DM (1) P Total power dissipation at T = 25 C 100 W TOT C (2) P Total power dissipation at T = 25 C 4.8 W TOT pcb T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. The value is rated by R . thj-case 2. The value is rated by R . thj-pcb 3. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.5 C/W thj-case (1) R Thermal resistance junction-pcb 31.3 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2 Oz Cu, t < 10 s. DS10014 - Rev 5 page 2/17