STL62P3LLH6

STL62P3LLH6 P-channel -30 V, 9 m typ., -62 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) D STL62P3LLH6 -30 V 10.5 m -62 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description Figure 1: Internal schematic diagram This device is a P-channel Power MOSFET developed using the STripFET H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packing TM STL62P3LLH6 62P3LLH6 PowerFLAT 5x6 Tape and reel . October 2016 DocID025836 Rev 6 1/16 www.st.com This is information on a product in full production. Contents STL62P3LLH6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 PowerFLAT 5x6 type R package information .................................. 11 5 Packing information ...................................................................... 13 6 Revision history ............................................................................ 15 2/16 DocID025836 Rev 6