Product Information

STL18NM60N

STL18NM60N electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V 0.2 60 Ohm 6 A MDmesh II
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

121: USD 1.0375 ea
Line Total: USD 125.54

541 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 121  Multiples: 1
Pack Size: 1

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Availability Price Quantity
541 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 121
Multiples : 1

Stock Image

STL18NM60N
STMicroelectronics

121 : USD 1.0375

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STL18NM60N N-channel 600 V, 0.26 typ., 12 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V T R max I DS Jmax DS(on) D %RWWRP YLHZ 6 6 6 12 A STL18NM60N 650 V 0.310 * (1) 1. The value is rated according to R thj-case 100% avalanche tested Low input capacitance and gate charge 7 +9 3RZHU)/ Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds * lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 - V Table 1. Device summary Order code Marking Packages Packaging STL18NM60N 18NM60N PowerFLAT 8x8 HV Tape and reel November 2013 DocID018856 Rev 3 1/16 This is information on a product in full production. www.st.comContents STL18NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID018856 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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