STL73 STMicroelectronics

STL73 MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n MEDIUM VOLTAGE CAPABILITY Figure 1: Package n LOW SPREAD OF DYNAMIC PARAMETERS n MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION n VERY HIGH SWITCHING SPEED APPLICATIONS n COMPACT FLUORESCENT LAMPS (CFLS) TO-92 DESCRIPTION Figure 2: Internal Schematic Diagram The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is designed for use in Compact Fluorescent Lamps. Table 1: Order Codes Part Number Marking Package Packaging L73 L STL73 TO-92 Bulk or ( ) L73 H See:note on page 2 Rev. 1 July 2005 1/6STL73 Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 700 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B V Emitter-Base Voltage (I = 0) V V EBO C (BR)EBO I Collector Current 1.5 A C I Collector Peak Current (t < 5ms) 3A CM p I Base Current 0.5 A B I Base Peak Current (t < 5ms) 1.5 A BM p o P Total Dissipation at T = 25 C 1.1 W tot C T Storage Temperature -65 to 150 C stg T Max. Operating Junction Temperature 150 C J Table 3: Thermal Data o R Thermal Resistance Junction-Ambient Max 112 thj-amb C/W o Table 4: Electrical Characteristics (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off Current V = 700 V 1 mA CEV CE (V = -1.5 V) o 5 mA BE V = 700 V T = 125 C CE j V Emitter-Base i = 10 mA 9 18 V (BR)EBO E Breakdown Voltage (I = 0 ) C V * Collector-Emitter I = 10 mA 400 V CEO(sus) C Sustaining Voltage (I = 0 ) B V * Collector-Emitter I = 0.3 A I = 60 mA 0.15 0.4 V CE(sat) C B Saturation Voltage 0.25 0.6 V I = 0.6 A I = 120 mA C B 0.4 1 V I = 1 A I = 250 mA C B V * Base-Emitter Saturation I = 0.6 A I = 120 mA 0.95 1.1 V BE(sat) C B Voltage h DC Current Gain I = 0.6 A V = 3 V FE C CE 10 16 Group L 15 21 Group H 4 10 I = 1.5 A V = 5 V C CE RESISTIVE LOAD I = 1 V = 125 V C CC t Rise Time 1 s I = -I = 200 mA t = 25 s f B1 B2 p Storage Time 4 s (see figure 4) Fall Time 0.7 s INDUCTIVE LOAD I = 0.3 V = 300 V C Clamp t Fall Time 0.3 s I = -I = 60 mA L = 3 mH f B1 B2 (see figure 3) * Pulsed: Pulsed duration = 300 s, duty cycle 1.5 %. The product is pre-selected in DC current gain (Group L and Group H). STMicroelectronics reserves the right to ship either groups accord- ing to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. 2/6