Product Information

STL65N3LLH5

STL65N3LLH5 electronic component of STMicroelectronics

Datasheet
N-Channel 30 V 65A (Tc) 60W (Tc) Surface Mount PowerFlat™ (5x6)
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.9621 ea
Line Total: USD 2886.3

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

STL65N3LLH5
STMicroelectronics

3000 : USD 0.9621
6000 : USD 0.8727

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STL65N3LLH5
STMicroelectronics

1 : USD 1.5625
10 : USD 1.2288
100 : USD 1.0764
500 : USD 1.0109
1000 : USD 0.9963

0 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STL65N3LLH5
STMicroelectronics

1 : USD 1.5625
10 : USD 1.2288
100 : USD 1.0764
500 : USD 1.0109
1000 : USD 0.9963

0 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

STL65N3LLH5
STMicroelectronics

3000 : USD 0.9845

0 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 45
Multiples : 1

Stock Image

STL65N3LLH5
STMicroelectronics

45 : USD 1.344
100 : USD 1.2524

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

STL65N3LLH5 N-channel 30 V, 0.0048 , 19 A, PowerFLAT 5x6 STripFET V Power MOSFET Features R DS(on) Order code V I DSS D max (1) STL65N3LLH5 30 V <0.0058 19 A 1. The value is rated according R thj-pcb 1 2 3 R * Q industry benchmark 4 DS(on) g Extremely low on-resistance R DS(on) PowerFLAT 5x6 Very low switching gate charge High avalanche ruggedness Low gate drive power losses Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFETV technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. 3 3 3 W 6IEOTTOM W 6IE OP 4 - 6 Table 1. Device summary Order code Marking Package Packaging STL65N3LLH5 65N3LLH5 PowerFLAT 5x6 Tape and reel December 2011 Doc ID 14299 Rev 5 1/16 www.st.com 16Contents STL65N3LLH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 15 2/16 Doc ID 14299 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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