STL7N6F7 STMicroelectronics

STL7N6F7 N-channel 60 V, 21 m typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package Datasheet - production data Features 1 Order code V R max I DS DS(on) D 2 3 STL7N6F7 60 V 25 m 7 A 6 1 Among the lowest R on the market DS(on) 5 2 4 Excellent FoM (figure of merit) 3 Low C /C ratio for EMI immunity rss iss High avalanche ruggedness PowerFLAT 2x2 Applications Switching applications Figure 1: Internal schematic diagram Description 1(D) 2(D) 3(G) This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more D efficient switching. S 6(D) 5(D) 4(S) Bottom view AM11269v1 Table 1: Device summary Order code Marking Package Packing STL7N6F7 ST7N PowerFLAT 2x2 Tape and reel April 2017 DocID028257 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STL7N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 2x2 package information ............................................. 10 5 Revision history ............................................................................ 12 2/13 DocID028257 Rev 3