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STP11N60DM2

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MOSFET POWER MOSFET
Power MOSFET with low on-resistance, 11A, 600V, in TO-220 package.
Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 1.0057 ea
Line Total: USD 1005.7

0 - Global Stock

MOQ: 1000 Multiples: 1000
Pack Size: 1000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 1000 Multiples : 1 STP11N60DM2 STMicroelectronics	1000 : USD 1.2148 2000 : USD 1.2025 2500 : USD 1.1905 3000 : USD 1.1786 4000 : USD 1.1669 5000 : USD 1.1551 10000 : USD 1.1436 20000 : USD 1.1321 50000 : USD 1.1209

0 - WHS 2 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 1000 Multiples : 1000 STP11N60DM2 STMicroelectronics	1000 : USD 1.086 2000 : USD 1.0056 3000 : USD 1.0056 4000 : USD 1.0056 5000 : USD 1.0056

0 - WHS 3 Ships to you between Thu. 23 May to Mon. 27 May MOQ : 1 Multiples : 1 STP11N60DM2 STMicroelectronics	1 : USD 4.9968 10 : USD 1.802 25 : USD 1.6984

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Additional Infomation About Product

The STP11N60DM2 is a N-Channel power MOSFET transistor manufactured by STMicroelectronics. It is particularly suited for low voltage, high frequency switching applications with an operating voltage range from 0.2V to 600V and a drain current of up to 11A. The STP11N60DM2 also features low on-resistances and fast switching speeds. It is an excellent choice for compact and low power applications, such as mobile devices, power supplies and DC-DC converters.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 10 A 10 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 370 mOhms 370 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 110 W 110 W
Mounting Style Through Hole Through Hole
Package / Case TO - 220 - 3 TO - 220 - 3
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 25 V 25 V
Qg - Gate Charge 16.5 nC 16.5 nC
Channel Mode Enhancement Enhancement
Tradename Mdmesh Mdmesh
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Fall Time 9.5 ns 9.5 ns
Product Type Mosfet Mosfet
Rise Time 6.3 ns 6.3 ns
Factory Pack Quantity : 1000 1000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 31 ns 31 ns
Typical Turn-On Delay Time 11.7 ns 11.7 ns
Series Stp11n60dm2 Stp11n60dm2
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Taric 8541290000 8541290000