STL80N75F6 STMicroelectronics

STL80N75F6 N-channel 75 V, 4.5 m typ., 18 A STripFET F6 Power MOSFET in PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) D STL80N75F6 75 V 5.5 m 18 A Very low on-resistance 1 2 3 Very low gate charge 4 High avalanche ruggedness PowerFLAT 5x6 Low gate drive power loss Applications Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 7 6 5 Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all G(4) DS(on) packages. 12 3 4 Top View S(1, 2, 3) AM15540v2 Table 1. Device summary Order code Marking Package Packaging STL80N75F6 80N75F6 PowerFLAT 5x6 Tape and reel August 2014 DocID018785 Rev 4 1/15 This is information on a product in full production. www.st.com 15Contents STL80N75F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 12 6 Revision history . 14 2/15 DocID018785 Rev 4