STL80N3LLH6 STMicroelectronics

STL80N3LLH6 N-channel 30 V, 0.0046 , 21 A PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET Features R DS(on) Order code V I DSS D max (1) STL80N3LLH6 30 V 0.0052 21 A 1. The value is rated according R thj-pcb 1 2 R * Q industry benchmark DS(on) g 3 4 Extremely low on-resistance R DS(on) PowerFLAT 5x6 High avalanche ruggedness Low gate drive power losses Very low switching gate charge Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 3 3 W 6IEOTTOM W 6IE OP 4 - 6 Table 1. Device summary Order code Marking Package Packaging STL80N3LLH6 80N3LLH6 PowerFLAT 5x6 Tape and reel December 2011 Doc ID 16773 Rev 4 1/13 www.st.com 13 Contents STL80N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 16773 Rev 4