Product Information

STL60P4LLF6

STL60P4LLF6 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.7306 ea
Line Total: USD 2191.8

2910 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2794 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STL60P4LLF6
STMicroelectronics

1 : USD 1.8145
10 : USD 1.5327
30 : USD 1.3755
100 : USD 1.2004
500 : USD 1.1218
1000 : USD 1.0876

1790 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 10
Multiples : 1

Stock Image

STL60P4LLF6
STMicroelectronics

10 : USD 1.2285
25 : USD 1.0723
100 : USD 0.837
250 : USD 0.8202

2910 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

STL60P4LLF6
STMicroelectronics

3000 : USD 0.7306

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STL60P4LLF6 Datasheet P-channel 40 V, 11.5 m typ., 60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I Order code DS DS(on) D STL60P4LLF6 40 V 14 m 60 A Very low on-resistance Very low gate charge High avalanche ruggedness PowerFLAT 5x6 Low gate drive power loss D(5, 6, 7, 8) Applications Switching applications G(4) Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits S(1, 2, 3) very low R in all packages. DS(on) AM01475v4 Product status link STL60P4LLF6 Product summary Order code STL60P4LLF6 Marking 60P4LLF6 Package PowerFLAT 5x6 Packing Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10066 - Rev 3 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL60P4LLF6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 40 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 60 A C (1) I D Drain current (continuous) at T = 100 C 42 A C (1)(3) I Drain current (pulsed) 240 A DM Drain current (continuous) at T = 25 C 13 A pcb (2) I D Drain current (continuous) at T = 100 C 9.3 A pcb (2)(3) I Drain current (pulsed) 52 A DM (1) P Total power dissipation at T = 25 C 100 W TOT C (2) P Total power dissipation at T = 25 C pcb 4.8 W TOT (2) Derating factor 0.03 W/C T Storage temperature -55 to 175 C stg T Maximum junction temperature 175 C J 1. The value is limited by R . thj-case 2. The value is limited by R . thj-pcb 3. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.5 C/W thj-case (1) R Thermal resistance junction-pcb, single operation 31.3 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu, t < 10 s. Note: For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. DS10066 - Rev 3 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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