STLD128DNT4 STMicroelectronics

STL128DN High voltage fast-switching NPN power transistor Features TAB High voltage capability Low spread of dynamic parameters Very high switching speed 3 3 Large RBSOA 2 2 1 1 Integrated antiparallel collector-emitter diode TO-220 TO-220FP TAB Applications Electronic ballast for fluorescent lighting 3 1 Flyback and forward single transistor low power converters TO-252 (DPAK) Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. Device summary Order codes Marking Packages Packaging STL128DN L128DN TO-220 Tube STL128DNFP L128DNFP TO-220FP Tube STLD128DNT4 LD128DN DPAK Tape and reel October 2009 Doc ID 13984 Rev 3 1/14 www.st.com 14Content STL128DN Content 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 5 3 Test circuit . 7 4 Package mechanical data . 8 5 Revision history . 13 2/14 Doc ID 13984 Rev 3