STN4NF06L STMicroelectronics

STN4NF06L electronic component of STMicroelectronics
STN4NF06L STMicroelectronics
STN4NF06L MOSFETs
STN4NF06L  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STN4NF06L MOSFETs across the USA, India, Europe, Australia, and various other global locations. STN4NF06L MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. STN4NF06L
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-CH 60V 4A STripFET
Datasheet: STN4NF06L Datasheet (PDF)
Price (USD)
4000: USD 0.3635 ea
Line Total: USD 1454 
Availability : 7760
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
4000$ 0.3635

Availability 2612
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5664
10$ 1.2476
30$ 0.8152
100$ 0.6288
500$ 0.5633
1000$ 0.5315


Availability 7760
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.3635

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STN4NF06L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STN4NF06L and other electronic components in the MOSFETs category and beyond.

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STN4NF06L Datasheet Automotive-grade N-channel 60 V, 0.07 typ., 4 A STripFET II Power MOSFET in a SOT-223 package Features V R max. I Order code DS DS(on) D 4 STN4NF06L 60 V < 0.1 4 A 3 2 1 AEC-Q101 qualified SOT-223 Exceptional dv/dt capability 100% avalanche tested Low gate charge D(2, 4) Applications Switching applications G(1) Description This Power MOSFET has been developed using STMicroelectronics unique S(3) STripFET process, which is specifically designed to minimize input capacitance and Int schem nTnZ SOT 223 gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STN4NF06L Product summary Order code STN4NF06L Marking 4NF06L Package SOT-223 Packing Tape and reel DS5801 - Rev 3 - May 2020 www.st.com For further information contact your local STMicroelectronics sales office.STN4NF06L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0 V) 60 V DS GS V Gate-source voltage 16 V GS Drain current (continuous) at T = 25 C 4 A C (1) I D Drain current (continuous) at T = 100 C 2.9 A C (2) I Drain current (pulsed) 16 A DM P Total power dissipation at T = 25 C 3.3 W TOT C Derating Factor 0.026 W/C (3) dv/dt Peak diode recovery avalanche energy 10 V/ns (4) E Single pulse avalanche energy 200 mJ AS T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Current limited by the package. 2. Pulse width limited by safe operating area. 3. I 3 A, di/dt 150 A/s, V = V , T T max. SD DD (BR)DSS J J 4. Starting T = 25 C, I = 4 A, V = 30 V. J D DD Table 2. Thermal data Symbol Parameter Value Unit (1) R 38 C/W thj-pcb Thermal resistance junction-pcb (2) R 100 C/W thj-pcb (3) T Maximum lead temperature for soldering purpose 260 C J 1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t <10 s. 2. When mounted on minimum recommended footprint. 3. For 10 s 1.6 mm from case. DS5801 - Rev 3 page 2/14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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