Product Information

STN4NF06L

STN4NF06L electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-CH 60V 4A STripFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.401 ea
Line Total: USD 1604

3880 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
3880 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 4000
Multiples : 4000

Stock Image

STN4NF06L
STMicroelectronics

4000 : USD 0.401

11640 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 4000
Multiples : 4000

Stock Image

STN4NF06L
STMicroelectronics

4000 : USD 0.4355
8000 : USD 0.4355
12000 : USD 0.4355

3880 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 4000
Multiples : 4000

Stock Image

STN4NF06L
STMicroelectronics

4000 : USD 0.401

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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STN4NF06L Datasheet Automotive-grade N-channel 60 V, 0.07 typ., 4 A STripFET II Power MOSFET in a SOT-223 package Features V R max. I Order code DS DS(on) D 4 STN4NF06L 60 V < 0.1 4 A 3 2 1 AEC-Q101 qualified SOT-223 Exceptional dv/dt capability 100% avalanche tested Low gate charge D(2, 4) Applications Switching applications G(1) Description This Power MOSFET has been developed using STMicroelectronics unique S(3) STripFET process, which is specifically designed to minimize input capacitance and Int schem nTnZ SOT 223 gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STN4NF06L Product summary Order code STN4NF06L Marking 4NF06L Package SOT-223 Packing Tape and reel DS5801 - Rev 3 - May 2020 www.st.com For further information contact your local STMicroelectronics sales office.STN4NF06L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0 V) 60 V DS GS V Gate-source voltage 16 V GS Drain current (continuous) at T = 25 C 4 A C (1) I D Drain current (continuous) at T = 100 C 2.9 A C (2) I Drain current (pulsed) 16 A DM P Total power dissipation at T = 25 C 3.3 W TOT C Derating Factor 0.026 W/C (3) dv/dt Peak diode recovery avalanche energy 10 V/ns (4) E Single pulse avalanche energy 200 mJ AS T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Current limited by the package. 2. Pulse width limited by safe operating area. 3. I 3 A, di/dt 150 A/s, V = V , T T max. SD DD (BR)DSS J J 4. Starting T = 25 C, I = 4 A, V = 30 V. J D DD Table 2. Thermal data Symbol Parameter Value Unit (1) R 38 C/W thj-pcb Thermal resistance junction-pcb (2) R 100 C/W thj-pcb (3) T Maximum lead temperature for soldering purpose 260 C J 1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t <10 s. 2. When mounted on minimum recommended footprint. 3. For 10 s 1.6 mm from case. DS5801 - Rev 3 page 2/14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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