STP100N6F7 STMicroelectronics

STP100N6F7 N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP100N6F7 60 V 5.6 m 100A125 W TAB Among the lowest R on the market DS(on) 3 Excellent figure of merit (FoM) 2 1 Low C /C ratio for EMI immunity rss iss TO-220 High avalanche ruggedness Applications Switching applications Description Figure 1. Internal schematic diagram This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced % 7 trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. * 6 0 Y Table 1. Device summary Order code Marking Package Packaging STP100N6F7 100N6F7 TO-220 Tube December 2014 DocID027212 Rev 2 1/13 This is information on a product in full production. www.st.comContents STP100N6F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID027212 Rev 2