STL9P2UH7 STMicroelectronics

STL9P2UH7 P-channel 20 V, 0.0195 typ., 9 A STripFET H7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Description 1 2 This P-channel Power MOSFET utilizes the 3 STripFET H7 technology with a trench gate 4 structure combined with extremely low on- PowerFLAT 3.3x3.3 resistance. The device also offers ultra-low capacitances for higher switching frequency operations. Figure 1: Internal schematic diagram Table 1: Device summary D(5, 6, 7, 8) 8 7 6 5 Order code Marking Package Packaging PowerFLAT Tape and STL9P2UH7 9P2H7 3.3x3.3 reel G(4) For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. S(1, 2, 3) 1 2 3 4 Features Order code V R max I DS DS(on) D STL9P2UH7 20 V 0.0225 4.5 V 9 A October 2014 DocID025141 Rev 3 1/14 www.st.com This is information on a product in full production. Contents STL9P2UH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 PowerFLAT 3.3 x 3.3 package mechanical data ......................... 10 5 Revision history ............................................................................ 13 2/14 DocID025141 Rev 3