STP100N8F6 STMicroelectronics

STP100N8F6 N-channel 80 V, 0.008 typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R I P DS DS(on)max. D TOT STP100N8F6 80 V 0.009 100 A 176 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packing STP100N8F6 100N8F6 TO-220 Tube February 2016 DocID026838 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STP100N8F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 type A package information ................................................ 10 4.2 TO-220 type H package information ............................................... 12 5 Revision history ............................................................................ 14 2/15 DocID026838 Rev 3